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| NTE56045 thru NTE56047 TRIAC, 16A, Sensitive Gate Description: The NTE56045 through NTE56047 are glass passivated, sensitive gate TRIACs in an isolated full- pack type package designed for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Absolute Maximum Ratings: Repetitive Peak Off-Sate Voltage, VDRM NTE56045 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56046 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56047 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS On-State Current (Full Sine Wave, THS 38C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Non-Repetitive Peak On-State Current, ITSM (Full Sine Wave, TJ = +125C prior to Surge, with Reapplied VDRMmax) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A 2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec I Repetitive Rate-of-Rise of On-State Current after Triggering, dIT/dt (ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/s) MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s MT2 (+), G (-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s MT2 (-), G (-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s MT2 (-), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/s Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Heatsink (Full or Half Cycle), RthJHS With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W Typical Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W Note 1. Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on-state. The rate-of-rise of current should not exceed 15A/s. Electrical Characteristics: (TJ = +25C unless otherwise specfied) Parameter Static Characteristics Gate Trigger Current MT2 (+), G (+) MT2 (+), G (-) MT2 (-), G (-) MT2 (-), G (+) Latching Current MT2 (+), G (+) MT2 (+), G (-) MT2 (-), G (-) MT2 (-), G (+) Holding Current On-State Voltage Gate Trigger Voltage IH VT VGT ID dVD/dt tgt VD = 12V, IT = 0.1A IT = 20A VD = 12V, IT = 0.1A VD = 400V, IT = 0.1A, TJ = +125C Off-State Leakage Current Dynamic Characteristics Critical Rate-of-Rise of Off-State Voltage Gate Controlled Turn-On Time VDM = 67% VDRMmax, TJ = +125C, Exponential Waveform, Gate Open ITM = 20A, VD = VDRMmax, IG = 0.1A, dIG/dt = 5A/s f = 50 - 60Hz, Sinusoidal Waveform, R.H. 65%, Clean and Dustfree f = 1MHz - - 50 2 - - V/s s VD = VDRMmax, TJ = +125C IL VD = 12V, IT = 0.1A IGT VD = 12V, IT = 0.1A - - - - - - - - - - - 0.25 - 2.5 4.0 5.0 11 3.2 16 4.0 5.5 4.0 1.2 0.7 0.4 0.1 10 10 10 25 30 40 30 40 30 1.6 1.5 - 0.5 mA mA mA mA mA mA mA mA mA V V V mA Symbol Test Conditions Min Typ Max Unit Isolation Characteristics (Ths = +25C unless otherwise specified) RMS Isolation Voltage from All 3 Pins to External Heatsink Capacitance from T2 to External Heatsink VISOL CISOL - - - 10 2500 - V pF .181 (4.6) Max .114 (2.9) .252 (6.4) .126 (3.2) Dia Max .405 (10.3) Max Isol .622 (15.0) Max MT2 .118 (3.0) Max .531 (13.5) Min MT1 G .098 (2.5) .100 (2.54) |
Price & Availability of NTE56047
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